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《3D打印-尼龙粉 制造工艺配方精选》


3D打印尼龙粉概述
尼龙粉是一种常用于3D打印的热塑性材料，具有高强度、耐磨性、耐化学腐蚀性以及良好的机械性能。它广泛应用于选择性激光烧结（SLS）、多喷射熔融（MJF）等3D打印工艺。

3D打印尼龙粉的常见类型
尼龙11（PA11）：具有良好的抗紫外线和抗冲击性能，适合户外使用。
尼龙12（PA12）：强度和刚度更高，是SLS打印中最常用的材料之一。
复合尼龙材料：如玻璃纤维增强尼龙（如Nylon 12 GF Powder）和碳纤维增强尼龙（如Nylon 11 CF Powder），这些材料在强度和刚性上表现更优。

3D打印尼龙粉的应用领域
工业制造：用于制造机械零件、齿轮、轴承等，具有良好的耐磨性和机械强度。
汽车与航空航天：用于制造功能测试部件、发动机进气歧管、轻量化结构件等。
医疗领域：可用于制造生物相容性好的医疗器械。
消费品：如运动器材、鞋底模具等。

3D打印尼龙粉的优势
高精度与复杂结构：SLS和MJF工艺可以实现复杂几何形状的打印，无需支撑结构。
材料可重复使用：未烧结的尼龙粉末可以回收再利用，减少浪费。
良好的表面处理：尼龙粉末打印的部件表面可以进行喷砂、喷漆等后处理。

3D打印尼龙粉的局限性
吸湿性：尼龙材料容易吸收空气中的水分，可能导致打印件变形或性能下降。
表面粗糙度：MJF打印的部件表面相对粗糙，需要额外的后处理。
材料选择有限：与FDM等其他3D打印技术相比，SLS和MJF的材料种类相对较少。

总结
3D打印尼龙粉因其优异的机械性能和广泛的适用性，在工业制造、汽车、航空航天等领域具有重要的应用价值。然而，其吸湿性和表面粗糙度等局限性也需要在实际应用中加以注意。


2025版《国际光刻胶制造工艺配方精选汇编》

2025版《国际光刻胶制造工艺配方精选汇编》

极紫外光刻胶（EUV光刻胶）技术：EUV光刻胶是目前最先进的光刻胶技术之一，主要用于极紫外光刻工艺，能够实现极小的线宽和高分辨率的图形转移，是制造高端芯片的关键材料例如，JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化（TOK）也在EUV光刻胶领域处于领先地位，其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术：通过优化光刻胶的化学配方和结构，提高光刻胶对光的灵敏度和分辨率，从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶，具有良好的灵敏度，将EUV的吸收效率提升了4倍，并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术：为了进一步提高光刻分辨率，采用多层膜光刻技术，通过在光刻胶层之间增加特殊的膜层，减少光的反射和散射，提高光刻的对比度和分辨率。

　　本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料，资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果，技术指标，解决的具体问题等等，是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种】英文
【项目数量】56项
【电子版】1680元（PDF文档  邮件发送）

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极紫外光刻胶（EUV光刻胶）技术：EUV光刻胶是目前最先进的光刻胶技术之一，主要用于极紫外光刻工艺，能够实现极小的线宽和高分辨率的图形转移，是制造高端芯片的关键材料例如，JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化（TOK）也在EUV光刻胶领域处于领先地位，其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术：通过优化光刻胶的化学配方和结构，提高光刻胶对光的灵敏度和分辨率，从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶，具有良好的灵敏度，将EUV的吸收效率提升了4倍，并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术：为了进一步提高光刻分辨率，采用多层膜光刻技术，通过在光刻胶层之间增加特殊的膜层，减少光的反射和散射，提高光刻的对比度和分辨率。

　　本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料，资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果，技术指标，解决的具体问题等等，是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种】英文
【项目数量】56项
【电子版】1680元（PDF文档  邮件发送）

目录

序号项目名称研制单位
1Enhanced Euv Materials, Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON ED [US]
O'CALLAGHAN GREGORY [GB]
ROTH JOHN [US]
MCCLELLAND ALEXANDRA [GB]
LADA TOM [US]
POPESCU CARMEN [GB]
2Euv Lithography Using Polymer Crystal-Based ReticlesREKHI SANDEEP
WALLING THOMAS JOHN FARRELL
PICHUMANI PRADEEP SAILAM
3Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using SameHONG SUKWON [KR]
HWANG CHAN CUK [KR]
KIM DO WON [KR]
BYEON JIN HWAN [KR]
AHN JAE BOONG [KR]
4Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The SamePARK CHUL KYUN
HONG JU HEE
CHOI MUN SU
KIM DONG HOI
5Pellicle For Euv LithographyHONG JU-HEE [KR]
PARK CHUL-KYUN [KR]
CHOI MUN-SU [KR]
KIM DONG-HOI [KR]
6Method To Reduce Line Edge Roughness For Euv Photoresist PatternWANG XIN-KE [CN]
SHEN ZE-QING [CN]
SINGHA ROY SUSMIT [IN]
MALLICK ABHIJIT BASU [US]
BHUYAN BHASKAR JYOTI [IN]
TANG JIECONG [SG]
SUDIJONO JOHN [US]
SALY MARK [US]
7Enhanced Euv Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON EDWARD [US]
ROTH JOHN [US]
LADA TOM [US]
O'CALLAGHAN GREG [GB]
8Organometallic Tin Clusters As Euv PhotoresistLU FENG [US]
9Euv Low Roughness Euv LithographyWISE RICHARD
SHAMMA NADER
10Enhanced Euv Photoresist And Methods Of Use ThereofROBINSON ALEX P G
JACKSON EDWARD
ROTH JOHN
LADA TOM
O 'CALLAGHAN GREG
11Pellicle For Euv LithographyHONG JU HEE
JUNG MIN WOOK
CHOI MUN SU
12Method Of Euv LithographyCHEN TAI-YU [TW]
KHIVSARA SAGAR DEEPAK [IN]
CHIEN SHANG-CHIEH [TW]
LAM KAI TAK [SG]
YU SHENG-KANG [TW]
13Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The SameLEE GEUN SU [KR]
LEE YEONG SEON
SEONG YEON HEE
KIM SEOK HYUN
KIM YOUNG CHAN
CHEON JONG HYEON
LEE SEUNG HYUK
14Pellicle For Euv Lithography Masks And Methods Of Manufacturing ThereofHSU PEI-CHENG [TW]
SUN TING-PI [TW]
LEE HSIN-CHANG [TW]
15Euv Metal Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
16Euv Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
17Euv/Eb Photoresist As Well As Preparation Method And Application ThereofFANG SHUNONG
WANG SU
TANG CHEN
18Euv Photomask And Manufacturing Method Of The SameHSU FENG YUAN [TW]
SHEN TRAN-HUI [TW]
HSU CHING-HSIANG [TW]
19Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their ManufactureFATEMEH DAVODI
PAUL CHATELAIN
CHARLES DEZELAH
20Method Of Forming Carbon-Based Spacers For Euv Photoresist PatternsWANG XINKE
SHEN ZEQING
ROY SUMEET SINGH
MALLIK ABHIJIT BASU
BHUYAN BHASKAR JYOTI
TANG JIECONG
SUDIJONO JOHN
SALY MARK
21Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv LithographyLIMA MARCIO D [US]
GRAHAM MARY VIOLA [US]
UEDA TAKAHIRO [US]
22Euv Membrane For Euv Lithography And Manufacturing Method For The SameYU LAN
SEO KYOUNG WON
PARK JIN SU
YANG SEONG JU
HONG SEONG GYU
LEE HWA CHOL
KIM CHEONG
KIM KYOUNG SOO
YUN WOO HYUN
CHO SANG JIN
LEE DONG HOON
LEE SO YOON
PARK SEONG HWAN
KIM YONG SU
KANG HONG GU
CHOI JAE HYUCK
23Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using ItHORIKOSHI JUN [JP]
24Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
25Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
26Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced PadKIM YONG KI [KR]
27Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
28Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv DosePRASAD RAJESH [US]
LIN YUNG-CHEN [US]
HUANG ZHIYU [US]
WANG FENGLIN [US]
LANG CHI-I [US]
HWANG HOYUNG DAVID [US]
AREVALO EDWIN A [US]
SHIM KYUHA [US]
29Method Of Manufacturing Euv Photo MasksLEE HSIN-CHANG [TW]
HSU PEI-CHENG [TW]
LIEN TA-CHENG [TW]
WANG TZU YI [TW]
30Blankmask And Photomask For Euv Lithography With Backside Conductive LayerWOO MI KYUNG
PARK MIN KYU
YANG CHUL KYU
31Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The SameJANG SUNG WOO
LEE SUN PYO
JUNG EUI HAN
32Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet LithographyKIM YONG KI [KR]
33Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or BothROBINSON ALEX P G [GB]
MCCLELLAND ALEXANDRA [GB]
O '' CALLAGHAN GREG [GB]
JACKSON ED [US]
NGUYEN VAN HUY [GB]
MELONI FERNANDA [IT]
34Phase Shift Blank Mask And Photomask For Euv LithographyKIM YONG-DAE
LEE JONG-HWA
YANG CHUL KYU
35Methods For Making Euv Patternable Hard MasksWU CHENGHAO
TIMOTHY WILLIAM WEIDMAN
KATIE NARDI
36Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofCHAO TZU-ANG [TW]
CHENG CHAO-CHING [TW]
WANG HAN [TW]
37Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
38Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods ThereofAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
UNO TOSHIYUKI [JP]
ISHIKAWA ICHIRO [JP]
SAKAKI KENICHI [JP]
39Thin Film For Euv Lithography Mask And Method Of Manufacturing SameXU BEICHENG
LI WEIHAO
LI HUANLING
LI XINCHANG
LIN JINXIANG
40Euv Light Generation System And Production Method Of Electronic DeviceNISHIMURA YUICHI
UENO YOSHIFUMI
41Thin Film For Euv Lithography Mask And Method Of Manufacturing SameSON JUNG-PIL
XU BEICHENG
LI XINCHANG
42Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing SameJI MINGHUA
DONG YUHU
HUANG ZAOHONG
43Euv Photomask And Manufacturing Method ThereofXUE WENZHANG
LIAN DACHENG
LI XINCHANG
44Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The SameCHOI MUN SU
HONG JU HEE
PARK CHUL KYUN
KIM DONG HOI
45Detection Method Of Euv Pellicle StatusLIU YEN-HAO [TW]
WANG SHAO-HUA [TW]
ZHANG ZHENG-HAO [TW]
LIN FAN-CHI [TW]
KUO CHUEH-CHI [TW]
CHEN LI-JUI [TW]
LIU HENG-HSIN [TW]
46Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
47Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
48Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods ThereforAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
SASAKI KENICHI [JP]
ISHIKAWA ICHIRO [JP]
UNO TOSHIYUKI [JP]
49Extreme Ultraviolet Lithography Method And Euv PhotomaskLEE CHIEN-MIN [TW]
CHEN YEN-LIANG [TW]
LIN SHY-JAY [TW]
CHEN LEE-FENG [TW]
TAI KUO LUN [TW]
50Phase Shift Blankmask And Photomask For Euv LithographyPARK MIN-KWANG [KR]
PARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
YANG CHUL-KYU [KR]
KIM YONG-DAE [KR]
51Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The SamePARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
PARK MIN-KWANG [KR]
YANG CHUL-KYU [KR]
52Membrane For Euv LithographyHOUWELING ZOMER SILVESTER [NL]
GHIASI KABIRI MAHNAZ [NL]
GIESBERS ADRIANUS JOHANNES MARIA [NL]
BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA [NL]
53Preferential Infiltration In Lithographic Process Flow For Euv Car ResistALVA GABRIELA [US]
HAN ZHEN-XING [CN]
SACHAN MADHUR [IN]
LANG CHI-I [US]
ZHOU LIN [CN]
LIU LEQUN [US]
KAZEM NASRIN [US]
54Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing ThereofLIMA MARCIO D [US]
UEDA TAKAHIRO [US]
55Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofLIN YUN-YUE [TW]
56Methods And Related Systems For Depositing Euv Sensitive FilmsPATEL KISHAN ASHOKBHAI [IN]
TOMCZAK YOANN [FR]
DEZELAH CHARLES [US]
ZYULKOV IVAN [RU]
DE ROEST DAVID KURT [BE]
GIVENS MICHAEL [US]
PIUMI DANIELE [IT]