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《水性环氧地坪涂料制造工艺配方精选》

       


         国际新技术网编辑:为了更好的为读者呈现国际、国内外新型涂料技术详细内容,满足企业读者不同需求,共同探讨涂料制造的技术动态,恒志信科技公司独家推出《涂料新技术》资料版块,深度披露现今涂料制造与研制的发展方向,以及新工艺和产品用途,呈现我国涂料未来研制的技术环境及产品走向,欢迎关注!


         重防腐涂料能在苛刻条件下使用,并具有长效防腐寿命,重防腐涂料在化工大气和海洋环境里,一般可使用10年或15年以上,即使在酸、碱、盐和溶剂介质里,并在一定温度条件下,也能使用5年以上。厚膜化是重防腐涂料的重要标志。一般防腐涂料的涂层干膜厚度为100μm或150μm左右,而重防腐涂料干膜厚度则在200μm或300μm以上,还有500μm~1000μm,甚至高达2000μm。涂层与基体结合力强,涂料组成物中含有羟基(-OH),金属基体提供正离子,能形成化学键结合,在涂料中的偶联剂帮助下,甚至实现共价链的结合。在空间网状结构维系下,涂料组合物中含有的金属、金属氧化物纳米材料和稀土氧化物超微粉体,帮助涂层形成一个致密的界面过渡层,使其综合热力学性质与基体相匹配。


         防腐涂料应用领域主要有以下五个方面:


         1、新兴海洋工程:海上设施、海岸及海湾构造物、海上石油钻井平台;


         2、现代交通运输:高速公路护栏、桥梁、船艇、集装箱、火车及铁道设施、汽车、机场设施;


         3、能源工业:水工设备、水罐、气罐、石油精制设备、石油贮存设备(油管、油罐)、输变电设备、核电、煤矿;


         4、大型工业企业:造纸设备、医药设备、食品化工设备、金属容器内外壁、化工、钢铁、石化厂的管道、贮槽、矿山冶炼、水泥厂设备、有腐蚀介质的地面、墙壁、水泥构件;


         5、市政设施:煤气管道及其设施(如煤气柜)、天然气管道、饮水设施、垃圾处理设备等;


         防腐涂料已成为涂料领域的重要的生力军,防腐涂料发挥着越来越大的作用,发展前景可观。但传统产品逐渐改进完善,新的产品不断研发问世,要适应防腐市场和环保法规发展中新的标准和要求,尚需积极进取,持续创新。根据业内专家人士分析:现今防腐涂料价格明显呈上升趁势,这和对船舶涂料,海洋开发有关。近几年国家一直在对地球十分之七的海洋加大投资力度,其中防腐涂料就是这一块中的一个突出点。海洋采油平台是固定和半固定在海洋中的大型钢结构,长期受到海洋环境的严重腐蚀。由于平台远离大陆维修困难,所以要求防腐涂料对平台的保护寿命至少在15年以上,因此要采用重防腐涂料和耐久性高的长效防腐涂层配套体系。


         本篇是为了配合国家产业政策向广大企业、科研院校提供重防腐涂料技术制造工艺配方汇编技术资料。资料中每个项目包含了最详细的技术制造资料,现有技术问题及解决方案、产品生产工艺、配方、产品性能测试,对比分析。资料信息量大,实用性强,是从事新产品开发、参与市场竞争的必备工具。


         本篇系列汇编资料分为为精装合订本和光盘版,内容相同,用户可根据自己需求购买。


2025版《国际光刻胶制造工艺配方精选汇编》

2025版《国际光刻胶制造工艺配方精选汇编》

极紫外光刻胶(EUV光刻胶)技术:EUV光刻胶是目前最先进的光刻胶技术之一,主要用于极紫外光刻工艺,能够实现极小的线宽和高分辨率的图形转移,是制造高端芯片的关键材料例如,JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化(TOK)也在EUV光刻胶领域处于领先地位,其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术:通过优化光刻胶的化学配方和结构,提高光刻胶对光的灵敏度和分辨率,从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶,具有良好的灵敏度,将EUV的吸收效率提升了4倍,并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术:为了进一步提高光刻分辨率,采用多层膜光刻技术,通过在光刻胶层之间增加特殊的膜层,减少光的反射和散射,提高光刻的对比度和分辨率。

  本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料,资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果,技术指标,解决的具体问题等等,是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种英文
【项目数量】56项
电子版】1680元(PDF文档  邮件发送)


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极紫外光刻胶(EUV光刻胶)技术:EUV光刻胶是目前最先进的光刻胶技术之一,主要用于极紫外光刻工艺,能够实现极小的线宽和高分辨率的图形转移,是制造高端芯片的关键材料例如,JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化(TOK)也在EUV光刻胶领域处于领先地位,其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术:通过优化光刻胶的化学配方和结构,提高光刻胶对光的灵敏度和分辨率,从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶,具有良好的灵敏度,将EUV的吸收效率提升了4倍,并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术:为了进一步提高光刻分辨率,采用多层膜光刻技术,通过在光刻胶层之间增加特殊的膜层,减少光的反射和散射,提高光刻的对比度和分辨率。

  本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料,资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果,技术指标,解决的具体问题等等,是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种英文
【项目数量】56项
电子版】1680元(PDF文档  邮件发送)


目录

序号项目名称研制单位
1Enhanced Euv Materials, Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON ED [US]
O'CALLAGHAN GREGORY [GB]
ROTH JOHN [US]
MCCLELLAND ALEXANDRA [GB]
LADA TOM [US]
POPESCU CARMEN [GB]
2Euv Lithography Using Polymer Crystal-Based ReticlesREKHI SANDEEP
WALLING THOMAS JOHN FARRELL
PICHUMANI PRADEEP SAILAM
3Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using SameHONG SUKWON [KR]
HWANG CHAN CUK [KR]
KIM DO WON [KR]
BYEON JIN HWAN [KR]
AHN JAE BOONG [KR]
4Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The SamePARK CHUL KYUN
HONG JU HEE
CHOI MUN SU
KIM DONG HOI
5Pellicle For Euv LithographyHONG JU-HEE [KR]
PARK CHUL-KYUN [KR]
CHOI MUN-SU [KR]
KIM DONG-HOI [KR]
6Method To Reduce Line Edge Roughness For Euv Photoresist PatternWANG XIN-KE [CN]
SHEN ZE-QING [CN]
SINGHA ROY SUSMIT [IN]
MALLICK ABHIJIT BASU [US]
BHUYAN BHASKAR JYOTI [IN]
TANG JIECONG [SG]
SUDIJONO JOHN [US]
SALY MARK [US]
7Enhanced Euv Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON EDWARD [US]
ROTH JOHN [US]
LADA TOM [US]
O'CALLAGHAN GREG [GB]
8Organometallic Tin Clusters As Euv PhotoresistLU FENG [US]
9Euv Low Roughness Euv LithographyWISE RICHARD
SHAMMA NADER
10Enhanced Euv Photoresist And Methods Of Use ThereofROBINSON ALEX P G
JACKSON EDWARD
ROTH JOHN
LADA TOM
O 'CALLAGHAN GREG
11Pellicle For Euv LithographyHONG JU HEE
JUNG MIN WOOK
CHOI MUN SU
12Method Of Euv LithographyCHEN TAI-YU [TW]
KHIVSARA SAGAR DEEPAK [IN]
CHIEN SHANG-CHIEH [TW]
LAM KAI TAK [SG]
YU SHENG-KANG [TW]
13Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The SameLEE GEUN SU [KR]
LEE YEONG SEON
SEONG YEON HEE
KIM SEOK HYUN
KIM YOUNG CHAN
CHEON JONG HYEON
LEE SEUNG HYUK
14Pellicle For Euv Lithography Masks And Methods Of Manufacturing ThereofHSU PEI-CHENG [TW]
SUN TING-PI [TW]
LEE HSIN-CHANG [TW]
15Euv Metal Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
16Euv Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
17Euv/Eb Photoresist As Well As Preparation Method And Application ThereofFANG SHUNONG
WANG SU
TANG CHEN
18Euv Photomask And Manufacturing Method Of The SameHSU FENG YUAN [TW]
SHEN TRAN-HUI [TW]
HSU CHING-HSIANG [TW]
19Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their ManufactureFATEMEH DAVODI
PAUL CHATELAIN
CHARLES DEZELAH
20Method Of Forming Carbon-Based Spacers For Euv Photoresist PatternsWANG XINKE
SHEN ZEQING
ROY SUMEET SINGH
MALLIK ABHIJIT BASU
BHUYAN BHASKAR JYOTI
TANG JIECONG
SUDIJONO JOHN
SALY MARK
21Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv LithographyLIMA MARCIO D [US]
GRAHAM MARY VIOLA [US]
UEDA TAKAHIRO [US]
22Euv Membrane For Euv Lithography And Manufacturing Method For The SameYU LAN
SEO KYOUNG WON
PARK JIN SU
YANG SEONG JU
HONG SEONG GYU
LEE HWA CHOL
KIM CHEONG
KIM KYOUNG SOO
YUN WOO HYUN
CHO SANG JIN
LEE DONG HOON
LEE SO YOON
PARK SEONG HWAN
KIM YONG SU
KANG HONG GU
CHOI JAE HYUCK
23Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using ItHORIKOSHI JUN [JP]
24Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
25Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
26Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced PadKIM YONG KI [KR]
27Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
28Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv DosePRASAD RAJESH [US]
LIN YUNG-CHEN [US]
HUANG ZHIYU [US]
WANG FENGLIN [US]
LANG CHI-I [US]
HWANG HOYUNG DAVID [US]
AREVALO EDWIN A [US]
SHIM KYUHA [US]
29Method Of Manufacturing Euv Photo MasksLEE HSIN-CHANG [TW]
HSU PEI-CHENG [TW]
LIEN TA-CHENG [TW]
WANG TZU YI [TW]
30Blankmask And Photomask For Euv Lithography With Backside Conductive LayerWOO MI KYUNG
PARK MIN KYU
YANG CHUL KYU
31Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The SameJANG SUNG WOO
LEE SUN PYO
JUNG EUI HAN
32Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet LithographyKIM YONG KI [KR]
33Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or BothROBINSON ALEX P G [GB]
MCCLELLAND ALEXANDRA [GB]
O '' CALLAGHAN GREG [GB]
JACKSON ED [US]
NGUYEN VAN HUY [GB]
MELONI FERNANDA [IT]
34Phase Shift Blank Mask And Photomask For Euv LithographyKIM YONG-DAE
LEE JONG-HWA
YANG CHUL KYU
35Methods For Making Euv Patternable Hard MasksWU CHENGHAO
TIMOTHY WILLIAM WEIDMAN
KATIE NARDI
36Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofCHAO TZU-ANG [TW]
CHENG CHAO-CHING [TW]
WANG HAN [TW]
37Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
38Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods ThereofAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
UNO TOSHIYUKI [JP]
ISHIKAWA ICHIRO [JP]
SAKAKI KENICHI [JP]
39Thin Film For Euv Lithography Mask And Method Of Manufacturing SameXU BEICHENG
LI WEIHAO
LI HUANLING
LI XINCHANG
LIN JINXIANG
40Euv Light Generation System And Production Method Of Electronic DeviceNISHIMURA YUICHI
UENO YOSHIFUMI
41Thin Film For Euv Lithography Mask And Method Of Manufacturing SameSON JUNG-PIL
XU BEICHENG
LI XINCHANG
42Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing SameJI MINGHUA
DONG YUHU
HUANG ZAOHONG
43Euv Photomask And Manufacturing Method ThereofXUE WENZHANG
LIAN DACHENG
LI XINCHANG
44Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The SameCHOI MUN SU
HONG JU HEE
PARK CHUL KYUN
KIM DONG HOI
45Detection Method Of Euv Pellicle StatusLIU YEN-HAO [TW]
WANG SHAO-HUA [TW]
ZHANG ZHENG-HAO [TW]
LIN FAN-CHI [TW]
KUO CHUEH-CHI [TW]
CHEN LI-JUI [TW]
LIU HENG-HSIN [TW]
46Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
47Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
48Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods ThereforAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
SASAKI KENICHI [JP]
ISHIKAWA ICHIRO [JP]
UNO TOSHIYUKI [JP]
49Extreme Ultraviolet Lithography Method And Euv PhotomaskLEE CHIEN-MIN [TW]
CHEN YEN-LIANG [TW]
LIN SHY-JAY [TW]
CHEN LEE-FENG [TW]
TAI KUO LUN [TW]
50Phase Shift Blankmask And Photomask For Euv LithographyPARK MIN-KWANG [KR]
PARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
YANG CHUL-KYU [KR]
KIM YONG-DAE [KR]
51Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The SamePARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
PARK MIN-KWANG [KR]
YANG CHUL-KYU [KR]
52Membrane For Euv LithographyHOUWELING ZOMER SILVESTER [NL]
GHIASI KABIRI MAHNAZ [NL]
GIESBERS ADRIANUS JOHANNES MARIA [NL]
BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA [NL]
53Preferential Infiltration In Lithographic Process Flow For Euv Car ResistALVA GABRIELA [US]
HAN ZHEN-XING [CN]
SACHAN MADHUR [IN]
LANG CHI-I [US]
ZHOU LIN [CN]
LIU LEQUN [US]
KAZEM NASRIN [US]
54Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing ThereofLIMA MARCIO D [US]
UEDA TAKAHIRO [US]
55Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofLIN YUN-YUE [TW]
56Methods And Related Systems For Depositing Euv Sensitive FilmsPATEL KISHAN ASHOKBHAI [IN]
TOMCZAK YOANN [FR]
DEZELAH CHARLES [US]
ZYULKOV IVAN [RU]
DE ROEST DAVID KURT [BE]
GIVENS MICHAEL [US]
PIUMI DANIELE [IT]