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《绿色环保内墙涂料制造工艺配方精选》


         国际新技术网编辑:为了更好的为读者呈现国际、国内外新型涂料技术详细内容,满足企业读者不同需求,共同探讨涂料制造的技术动态,恒志信科技公司独家推出《涂料新技术》资料版块,深度披露现今涂料制造与研制的发展方向,以及新工艺和产品用途,呈现我国涂料未来研制的技术环境及产品走向,欢迎关注!


         内墙涂料就是一般装修用的乳胶漆。乳胶漆即是乳液性涂料,按照基材的不同,分为聚醋酸乙烯乳液和丙烯酸乳液两大类。乳胶漆以水为稀释剂,是一种施工方便、安全、耐水洗、透气性好的的涂料,它可根据不同的配色方案调配出不同的色泽。种类:水性内墙漆、油性内墙漆、干粉型内墙漆,属水性涂料,主要由水,乳液,颜料,填料,添加剂五种成分构成。


涂料分类

第一类是低档水溶性涂料,是聚乙烯醇溶解在水中,再在其中加入颜料等其他助剂而成。为改进其性能和降低成本采取了多种途径,牌号很多,最常见的是106、803涂料。该类涂料具有价格便宜、无毒、无臭、施工方便等优点。由于其成膜物是水溶性的,所以用湿布擦洗后总要留下些痕迹,耐久性也不好,易泛黄变色,但其价格便宜,施工也十分方便,目前消耗量仍最大,多为中低档居室或临时居室室内墙装饰选用。


第二类是乳胶漆,它是一种以水为介质,以丙烯酸酯类、苯乙烯-丙烯酸酯共聚物、醋酸乙烯酯类聚合物的水溶液为成膜物质,加入多种辅助成分制成,其成膜物是不溶于水的,涂膜的耐水性和耐侯性比第一类大大提高,湿擦洗后不留痕迹,并有平光、高光等不同装饰类型。由于其色彩较少,装饰效果与106类相似,再加上宣传力度不够,价格又比106类涂料高得多,所以尚未被普遍认识。其实这两类涂料完全不是一个档次,乳胶漆在国外用得十分普遍,是一种既有前途的内墙装饰涂料。


第三类,新型的粉末涂料,包括硅藻泥、海藻泥、活性炭墙材等,是目前比较环保的涂料。粉末涂料,直接兑水,工艺配合专用模具施工,深受消费者和设计师厚爱。


第四类是水性仿瓷涂料,其装饰效果细腻、光洁、淡雅,价格不高,施工工艺繁杂,耐湿擦性差。水性仿瓷涂料(环保配方):它包含方解石粉、锌白粉、轻质碳酸钙、双飞粉、灰钙粉,其特征在于它采用水溶性甲基纤维素和乙基纤维素的混合胶体溶液来作为混合粉料的溶剂;该仿瓷材料中各组成物的主要配比为:方解石粉料20-25份,锌白粉5-15份,轻质碳酸钙15-25份,双飞粉20-35份,灰钙粉15-25份,蒸馏水70份,甲基纤维素0.6份,乙基纤维素0.4份。该水性仿瓷涂料配方中可掺入适量钛白粉。该水性仿瓷涂料在调配和施工中不存在刺激性气味和其它有害物质。

仿瓷涂料不但在家装和墙艺中运用,而且在工艺品中也可以但到很好的效果,用这种涂料喷涂的产品仿瓷效果,可以到达逼真的程度。


第五类是十分风行的多彩涂料,该涂料的成膜物质是硝基纤维素,以水包油形式分散在水相中,一次喷涂可以形成多种颜色花纹。


第六类,又称液体墙纸,液体壁纸,是流行趋势较大的内墙装饰涂料,效果多样,色彩任意调制,而且可以任意订制效果,相比于第四类有超强的耐摩擦,抗污性能,而且工艺配合专用模具施工方便。



         本篇是为了配合国家产业政策向广大企业、科研院校提供内墙涂料技术制造工艺配方汇编技术资料。资料中每个项目包含了最详细的技术制造资料,现有技术问题及解决方案、产品生产工艺、配方、产品性能测试,对比分析。资料信息量大,实用性强,是从事新产品开发、参与市场竞争的必备工具。


         本篇系列汇编资料分为为精装合订本和光盘版,内容相同,用户可根据自己需求购买。


2025版《国际光刻胶制造工艺配方精选汇编》

2025版《国际光刻胶制造工艺配方精选汇编》

极紫外光刻胶(EUV光刻胶)技术:EUV光刻胶是目前最先进的光刻胶技术之一,主要用于极紫外光刻工艺,能够实现极小的线宽和高分辨率的图形转移,是制造高端芯片的关键材料例如,JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化(TOK)也在EUV光刻胶领域处于领先地位,其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术:通过优化光刻胶的化学配方和结构,提高光刻胶对光的灵敏度和分辨率,从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶,具有良好的灵敏度,将EUV的吸收效率提升了4倍,并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术:为了进一步提高光刻分辨率,采用多层膜光刻技术,通过在光刻胶层之间增加特殊的膜层,减少光的反射和散射,提高光刻的对比度和分辨率。

  本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料,资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果,技术指标,解决的具体问题等等,是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种英文
【项目数量】56项
电子版】1680元(PDF文档  邮件发送)


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极紫外光刻胶(EUV光刻胶)技术:EUV光刻胶是目前最先进的光刻胶技术之一,主要用于极紫外光刻工艺,能够实现极小的线宽和高分辨率的图形转移,是制造高端芯片的关键材料例如,JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化(TOK)也在EUV光刻胶领域处于领先地位,其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术:通过优化光刻胶的化学配方和结构,提高光刻胶对光的灵敏度和分辨率,从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶,具有良好的灵敏度,将EUV的吸收效率提升了4倍,并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术:为了进一步提高光刻分辨率,采用多层膜光刻技术,通过在光刻胶层之间增加特殊的膜层,减少光的反射和散射,提高光刻的对比度和分辨率。

  本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料,资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果,技术指标,解决的具体问题等等,是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种英文
【项目数量】56项
电子版】1680元(PDF文档  邮件发送)


目录

序号项目名称研制单位
1Enhanced Euv Materials, Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON ED [US]
O'CALLAGHAN GREGORY [GB]
ROTH JOHN [US]
MCCLELLAND ALEXANDRA [GB]
LADA TOM [US]
POPESCU CARMEN [GB]
2Euv Lithography Using Polymer Crystal-Based ReticlesREKHI SANDEEP
WALLING THOMAS JOHN FARRELL
PICHUMANI PRADEEP SAILAM
3Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using SameHONG SUKWON [KR]
HWANG CHAN CUK [KR]
KIM DO WON [KR]
BYEON JIN HWAN [KR]
AHN JAE BOONG [KR]
4Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The SamePARK CHUL KYUN
HONG JU HEE
CHOI MUN SU
KIM DONG HOI
5Pellicle For Euv LithographyHONG JU-HEE [KR]
PARK CHUL-KYUN [KR]
CHOI MUN-SU [KR]
KIM DONG-HOI [KR]
6Method To Reduce Line Edge Roughness For Euv Photoresist PatternWANG XIN-KE [CN]
SHEN ZE-QING [CN]
SINGHA ROY SUSMIT [IN]
MALLICK ABHIJIT BASU [US]
BHUYAN BHASKAR JYOTI [IN]
TANG JIECONG [SG]
SUDIJONO JOHN [US]
SALY MARK [US]
7Enhanced Euv Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON EDWARD [US]
ROTH JOHN [US]
LADA TOM [US]
O'CALLAGHAN GREG [GB]
8Organometallic Tin Clusters As Euv PhotoresistLU FENG [US]
9Euv Low Roughness Euv LithographyWISE RICHARD
SHAMMA NADER
10Enhanced Euv Photoresist And Methods Of Use ThereofROBINSON ALEX P G
JACKSON EDWARD
ROTH JOHN
LADA TOM
O 'CALLAGHAN GREG
11Pellicle For Euv LithographyHONG JU HEE
JUNG MIN WOOK
CHOI MUN SU
12Method Of Euv LithographyCHEN TAI-YU [TW]
KHIVSARA SAGAR DEEPAK [IN]
CHIEN SHANG-CHIEH [TW]
LAM KAI TAK [SG]
YU SHENG-KANG [TW]
13Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The SameLEE GEUN SU [KR]
LEE YEONG SEON
SEONG YEON HEE
KIM SEOK HYUN
KIM YOUNG CHAN
CHEON JONG HYEON
LEE SEUNG HYUK
14Pellicle For Euv Lithography Masks And Methods Of Manufacturing ThereofHSU PEI-CHENG [TW]
SUN TING-PI [TW]
LEE HSIN-CHANG [TW]
15Euv Metal Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
16Euv Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
17Euv/Eb Photoresist As Well As Preparation Method And Application ThereofFANG SHUNONG
WANG SU
TANG CHEN
18Euv Photomask And Manufacturing Method Of The SameHSU FENG YUAN [TW]
SHEN TRAN-HUI [TW]
HSU CHING-HSIANG [TW]
19Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their ManufactureFATEMEH DAVODI
PAUL CHATELAIN
CHARLES DEZELAH
20Method Of Forming Carbon-Based Spacers For Euv Photoresist PatternsWANG XINKE
SHEN ZEQING
ROY SUMEET SINGH
MALLIK ABHIJIT BASU
BHUYAN BHASKAR JYOTI
TANG JIECONG
SUDIJONO JOHN
SALY MARK
21Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv LithographyLIMA MARCIO D [US]
GRAHAM MARY VIOLA [US]
UEDA TAKAHIRO [US]
22Euv Membrane For Euv Lithography And Manufacturing Method For The SameYU LAN
SEO KYOUNG WON
PARK JIN SU
YANG SEONG JU
HONG SEONG GYU
LEE HWA CHOL
KIM CHEONG
KIM KYOUNG SOO
YUN WOO HYUN
CHO SANG JIN
LEE DONG HOON
LEE SO YOON
PARK SEONG HWAN
KIM YONG SU
KANG HONG GU
CHOI JAE HYUCK
23Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using ItHORIKOSHI JUN [JP]
24Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
25Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
26Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced PadKIM YONG KI [KR]
27Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
28Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv DosePRASAD RAJESH [US]
LIN YUNG-CHEN [US]
HUANG ZHIYU [US]
WANG FENGLIN [US]
LANG CHI-I [US]
HWANG HOYUNG DAVID [US]
AREVALO EDWIN A [US]
SHIM KYUHA [US]
29Method Of Manufacturing Euv Photo MasksLEE HSIN-CHANG [TW]
HSU PEI-CHENG [TW]
LIEN TA-CHENG [TW]
WANG TZU YI [TW]
30Blankmask And Photomask For Euv Lithography With Backside Conductive LayerWOO MI KYUNG
PARK MIN KYU
YANG CHUL KYU
31Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The SameJANG SUNG WOO
LEE SUN PYO
JUNG EUI HAN
32Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet LithographyKIM YONG KI [KR]
33Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or BothROBINSON ALEX P G [GB]
MCCLELLAND ALEXANDRA [GB]
O '' CALLAGHAN GREG [GB]
JACKSON ED [US]
NGUYEN VAN HUY [GB]
MELONI FERNANDA [IT]
34Phase Shift Blank Mask And Photomask For Euv LithographyKIM YONG-DAE
LEE JONG-HWA
YANG CHUL KYU
35Methods For Making Euv Patternable Hard MasksWU CHENGHAO
TIMOTHY WILLIAM WEIDMAN
KATIE NARDI
36Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofCHAO TZU-ANG [TW]
CHENG CHAO-CHING [TW]
WANG HAN [TW]
37Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
38Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods ThereofAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
UNO TOSHIYUKI [JP]
ISHIKAWA ICHIRO [JP]
SAKAKI KENICHI [JP]
39Thin Film For Euv Lithography Mask And Method Of Manufacturing SameXU BEICHENG
LI WEIHAO
LI HUANLING
LI XINCHANG
LIN JINXIANG
40Euv Light Generation System And Production Method Of Electronic DeviceNISHIMURA YUICHI
UENO YOSHIFUMI
41Thin Film For Euv Lithography Mask And Method Of Manufacturing SameSON JUNG-PIL
XU BEICHENG
LI XINCHANG
42Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing SameJI MINGHUA
DONG YUHU
HUANG ZAOHONG
43Euv Photomask And Manufacturing Method ThereofXUE WENZHANG
LIAN DACHENG
LI XINCHANG
44Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The SameCHOI MUN SU
HONG JU HEE
PARK CHUL KYUN
KIM DONG HOI
45Detection Method Of Euv Pellicle StatusLIU YEN-HAO [TW]
WANG SHAO-HUA [TW]
ZHANG ZHENG-HAO [TW]
LIN FAN-CHI [TW]
KUO CHUEH-CHI [TW]
CHEN LI-JUI [TW]
LIU HENG-HSIN [TW]
46Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
47Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
48Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods ThereforAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
SASAKI KENICHI [JP]
ISHIKAWA ICHIRO [JP]
UNO TOSHIYUKI [JP]
49Extreme Ultraviolet Lithography Method And Euv PhotomaskLEE CHIEN-MIN [TW]
CHEN YEN-LIANG [TW]
LIN SHY-JAY [TW]
CHEN LEE-FENG [TW]
TAI KUO LUN [TW]
50Phase Shift Blankmask And Photomask For Euv LithographyPARK MIN-KWANG [KR]
PARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
YANG CHUL-KYU [KR]
KIM YONG-DAE [KR]
51Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The SamePARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
PARK MIN-KWANG [KR]
YANG CHUL-KYU [KR]
52Membrane For Euv LithographyHOUWELING ZOMER SILVESTER [NL]
GHIASI KABIRI MAHNAZ [NL]
GIESBERS ADRIANUS JOHANNES MARIA [NL]
BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA [NL]
53Preferential Infiltration In Lithographic Process Flow For Euv Car ResistALVA GABRIELA [US]
HAN ZHEN-XING [CN]
SACHAN MADHUR [IN]
LANG CHI-I [US]
ZHOU LIN [CN]
LIU LEQUN [US]
KAZEM NASRIN [US]
54Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing ThereofLIMA MARCIO D [US]
UEDA TAKAHIRO [US]
55Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofLIN YUN-YUE [TW]
56Methods And Related Systems For Depositing Euv Sensitive FilmsPATEL KISHAN ASHOKBHAI [IN]
TOMCZAK YOANN [FR]
DEZELAH CHARLES [US]
ZYULKOV IVAN [RU]
DE ROEST DAVID KURT [BE]
GIVENS MICHAEL [US]
PIUMI DANIELE [IT]