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《水性聚氨酯涂料制造工艺配方精选》

       


         国际新技术网编辑:为了更好的为读者呈现国际、国内外新型涂料技术详细内容,满足企业读者不同需求,共同探讨涂料制造的技术动态,恒志信科技公司独家推出《涂料新技术》资料版块,深度披露现今涂料制造与研制的发展方向,以及新工艺和产品用途,呈现我国涂料未来研制的技术环境及产品走向,欢迎关注!


         聚氨酯涂料是较常见的一类涂料,可以分为双组分聚氨酯涂料和单组分聚氨酯涂料

双组分聚氨酯涂料一般是由异氰酸酯预聚物(也叫低分子氨基甲酸酯聚合物)和含羟基树脂两部分组成,通常称为固化剂组分和主剂组分。这一类涂料的品种很多,应用范围也很广,根据含羟基组分的不同可分为丙烯酸聚氨酯、醇酸聚氨酯、聚酯聚氨酯、聚醚聚氨酯、环氧聚氨酯等品种。一般都具有良好的机械性能、较高的固体含量、各方面的性能都比较好。是很有发展前途的一类涂料品种。主要应用方向有木器涂料、汽车修补涂料、防腐涂料地坪漆、电子涂料、特种涂料、聚氨酯防水涂料等。缺点是施工工序复杂,对施工环境要求很高,漆膜容易产生弊病。


         单组分聚氨酯涂料主要有氨酯油涂料、潮气固化聚氨酯涂料、封闭型聚氨酯涂料等品种。应用面不如双组分涂料广,主要用于地板涂料、防腐涂料、预卷材涂料等,其总体性能不如双组分涂料全面。


       

双组分聚氨酯涂料
  双组分聚氨酯涂料具有成膜温度低、附着力强、耐磨性好、硬度大以及耐化学品、耐候性好等优越性能,广泛作为工业防护、木器家具和汽车涂料。水性双组分聚氨酯涂料将双组分溶剂型聚氨酯涂料的高性能和水性涂料的低VOC含量相结合,成为涂料工业的研究热点。水性双组分聚氨酯涂料是由含-OH基的水性多元醇和含-NCO基的低黏度多异氰酸酯固化剂组成,其涂膜性能主要由羟基树脂的组成和结构决定。

单组分水性聚氨酯涂料
单组分水性聚氨酯涂料是以水性聚氨酯树脂为基料,并以水为分散介质的一类涂料。通过交联改性的水性聚氨酯涂料具有良好的储存稳定性、涂膜力学性能、耐水性、耐溶剂性及耐老化性能,而且与传统的溶剂型聚氨酯涂料的性能相近,是水性聚氨酯涂料的一个重要发展方向。

光固化水性聚氨酯涂料
光固化水性聚氨酯涂料采用电子束辐射、紫外光辐射的高强度辐射引发低活性的预聚物体系产生交联固化,以紫外光固化形式为主。先用不饱和聚酯多元醇制备预聚物,然后用常规的方法引进粒子基因,经亲水处理后制得在主链上带双键的聚氨酯水分散体,再与易溶的高活性三丙烯酸烷氧基酯单体、光敏剂等助剂混合得到光固化水性聚氨酯涂料。

室温固化水性聚氨酯涂料
对于某些热敏基材和大型制件,不能采用加热的方式交联,必须采用室温交联的水性聚氨酯涂料。通过与水分散性多异氰酸酯结合,可以改进水性端羟基聚氨酯预聚物/丙烯酸酯混合物,尤其是羟基丙烯酸酯混合物的性能。此类水性聚氨酯涂料,采用特制的多异氰酸酯交联剂,即含-NCO端基的异氰酸酯预聚物,经亲水处理后分散于各种含羟基聚合物中而形成分散体,与多种含羟基聚合物水分散体组成能在室温固化的聚氨酯水性涂料。

第三代水性聚氨酯涂料(PUA)
聚氨酯(PU)乳液和聚丙烯酸(PAA)乳液同其溶剂型产品相比,具有低廉,安全,不燃烧,无毒,不污染环境等优点。纯PAA乳液存在耐磨性、耐水性和耐化学品性差的缺陷,固含量高,应用范围不广等。PU和PAA在性质上具有互补作用。PUA复合乳液兼备了二者的优点,具有耐磨、耐腐蚀和光亮,柔软有弹性,耐水性和力学性能好,耐候性佳等特性,因此被誉为“第三代水性聚氨酯”,成为当今涂料一个发展趋势。

环保型低芳烃聚氨酯涂料
该涂料既可弥补水性涂料性能不足,保持溶剂型涂料的优异性能。又可减少涂料对环境的影响。兼顾性能与环保性,较好地解决了这一问题。该涂料体系采用气味小、毒性低的石油类低极性溶剂为稀释剂。可显著减少对环境产生污染的物质,如二甲苯及有害废气污染物(HAPs)的排放量,作为溶剂体系涂料,它还具有良好的涂膜及施工性能,在冬季低温条件下也可施工。此外,由于该涂料体系中溶剂的溶解力低,不会产生侵蚀,因而易于重涂。并可用于喷涂易被溶剂侵蚀的材料。

         本篇是为了配合国家产业政策向广大企业、科研院校提供重防腐涂料技术制造工艺配方汇编技术资料。资料中每个项目包含了最详细的技术制造资料,现有技术问题及解决方案、产品生产工艺、配方、产品性能测试,对比分析。资料信息量大,实用性强,是从事新产品开发、参与市场竞争的必备工具。


         本篇系列汇编资料分为为精装合订本和光盘版,内容相同,用户可根据自己需求购买。


2025版《国际光刻胶制造工艺配方精选汇编》

2025版《国际光刻胶制造工艺配方精选汇编》

极紫外光刻胶(EUV光刻胶)技术:EUV光刻胶是目前最先进的光刻胶技术之一,主要用于极紫外光刻工艺,能够实现极小的线宽和高分辨率的图形转移,是制造高端芯片的关键材料例如,JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化(TOK)也在EUV光刻胶领域处于领先地位,其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术:通过优化光刻胶的化学配方和结构,提高光刻胶对光的灵敏度和分辨率,从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶,具有良好的灵敏度,将EUV的吸收效率提升了4倍,并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术:为了进一步提高光刻分辨率,采用多层膜光刻技术,通过在光刻胶层之间增加特殊的膜层,减少光的反射和散射,提高光刻的对比度和分辨率。

  本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料,资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果,技术指标,解决的具体问题等等,是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种英文
【项目数量】56项
电子版】1680元(PDF文档  邮件发送)


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极紫外光刻胶(EUV光刻胶)技术:EUV光刻胶是目前最先进的光刻胶技术之一,主要用于极紫外光刻工艺,能够实现极小的线宽和高分辨率的图形转移,是制造高端芯片的关键材料例如,JSR公司在2011年就与SEMATECH联合开发出用于15nm工艺的化学放大型EUV光刻胶东京应化(TOK)也在EUV光刻胶领域处于领先地位,其在2020年拥有EUV光刻胶51.8%的市占率。

高灵敏度和高分辨率光刻胶技术:通过优化光刻胶的化学配方和结构,提高光刻胶对光的灵敏度和分辨率,从而实现更小的图形尺寸和更高的集成度如Inpria生产的包含氧化锡的EUV光刻胶,具有良好的灵敏度,将EUV的吸收效率提升了4倍,并且可以实现更简单的制造流程和更大的工艺窗口。

多层膜光刻技术:为了进一步提高光刻分辨率,采用多层膜光刻技术,通过在光刻胶层之间增加特殊的膜层,减少光的反射和散射,提高光刻的对比度和分辨率。

  本资料是收录涉及《国际光刻胶制造工艺配方精选汇编》最新专利技术资料,资料中包括制造原料、配方、生产工艺、产品性能测试及标准、实际应用效果,技术指标,解决的具体问题等等,是企业提高产品质量和发展新产品的重要、实用、超值和难得的技术资料。


【资料内容】制造工艺及配方
【资料语种英文
【项目数量】56项
电子版】1680元(PDF文档  邮件发送)


目录

序号项目名称研制单位
1Enhanced Euv Materials, Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON ED [US]
O'CALLAGHAN GREGORY [GB]
ROTH JOHN [US]
MCCLELLAND ALEXANDRA [GB]
LADA TOM [US]
POPESCU CARMEN [GB]
2Euv Lithography Using Polymer Crystal-Based ReticlesREKHI SANDEEP
WALLING THOMAS JOHN FARRELL
PICHUMANI PRADEEP SAILAM
3Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using SameHONG SUKWON [KR]
HWANG CHAN CUK [KR]
KIM DO WON [KR]
BYEON JIN HWAN [KR]
AHN JAE BOONG [KR]
4Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The SamePARK CHUL KYUN
HONG JU HEE
CHOI MUN SU
KIM DONG HOI
5Pellicle For Euv LithographyHONG JU-HEE [KR]
PARK CHUL-KYUN [KR]
CHOI MUN-SU [KR]
KIM DONG-HOI [KR]
6Method To Reduce Line Edge Roughness For Euv Photoresist PatternWANG XIN-KE [CN]
SHEN ZE-QING [CN]
SINGHA ROY SUSMIT [IN]
MALLICK ABHIJIT BASU [US]
BHUYAN BHASKAR JYOTI [IN]
TANG JIECONG [SG]
SUDIJONO JOHN [US]
SALY MARK [US]
7Enhanced Euv Photoresists And Methods Of Their UseROBINSON ALEX P G [GB]
JACKSON EDWARD [US]
ROTH JOHN [US]
LADA TOM [US]
O'CALLAGHAN GREG [GB]
8Organometallic Tin Clusters As Euv PhotoresistLU FENG [US]
9Euv Low Roughness Euv LithographyWISE RICHARD
SHAMMA NADER
10Enhanced Euv Photoresist And Methods Of Use ThereofROBINSON ALEX P G
JACKSON EDWARD
ROTH JOHN
LADA TOM
O 'CALLAGHAN GREG
11Pellicle For Euv LithographyHONG JU HEE
JUNG MIN WOOK
CHOI MUN SU
12Method Of Euv LithographyCHEN TAI-YU [TW]
KHIVSARA SAGAR DEEPAK [IN]
CHIEN SHANG-CHIEH [TW]
LAM KAI TAK [SG]
YU SHENG-KANG [TW]
13Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The SameLEE GEUN SU [KR]
LEE YEONG SEON
SEONG YEON HEE
KIM SEOK HYUN
KIM YOUNG CHAN
CHEON JONG HYEON
LEE SEUNG HYUK
14Pellicle For Euv Lithography Masks And Methods Of Manufacturing ThereofHSU PEI-CHENG [TW]
SUN TING-PI [TW]
LEE HSIN-CHANG [TW]
15Euv Metal Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
16Euv Photoresist As Well As Preparation Method And Application ThereofWANG SU
FANG SHUNONG
17Euv/Eb Photoresist As Well As Preparation Method And Application ThereofFANG SHUNONG
WANG SU
TANG CHEN
18Euv Photomask And Manufacturing Method Of The SameHSU FENG YUAN [TW]
SHEN TRAN-HUI [TW]
HSU CHING-HSIANG [TW]
19Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their ManufactureFATEMEH DAVODI
PAUL CHATELAIN
CHARLES DEZELAH
20Method Of Forming Carbon-Based Spacers For Euv Photoresist PatternsWANG XINKE
SHEN ZEQING
ROY SUMEET SINGH
MALLIK ABHIJIT BASU
BHUYAN BHASKAR JYOTI
TANG JIECONG
SUDIJONO JOHN
SALY MARK
21Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv LithographyLIMA MARCIO D [US]
GRAHAM MARY VIOLA [US]
UEDA TAKAHIRO [US]
22Euv Membrane For Euv Lithography And Manufacturing Method For The SameYU LAN
SEO KYOUNG WON
PARK JIN SU
YANG SEONG JU
HONG SEONG GYU
LEE HWA CHOL
KIM CHEONG
KIM KYOUNG SOO
YUN WOO HYUN
CHO SANG JIN
LEE DONG HOON
LEE SO YOON
PARK SEONG HWAN
KIM YONG SU
KANG HONG GU
CHOI JAE HYUCK
23Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using ItHORIKOSHI JUN [JP]
24Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
25Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
26Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced PadKIM YONG KI [KR]
27Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene MembraneKIM YONG KI [KR]
28Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv DosePRASAD RAJESH [US]
LIN YUNG-CHEN [US]
HUANG ZHIYU [US]
WANG FENGLIN [US]
LANG CHI-I [US]
HWANG HOYUNG DAVID [US]
AREVALO EDWIN A [US]
SHIM KYUHA [US]
29Method Of Manufacturing Euv Photo MasksLEE HSIN-CHANG [TW]
HSU PEI-CHENG [TW]
LIEN TA-CHENG [TW]
WANG TZU YI [TW]
30Blankmask And Photomask For Euv Lithography With Backside Conductive LayerWOO MI KYUNG
PARK MIN KYU
YANG CHUL KYU
31Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The SameJANG SUNG WOO
LEE SUN PYO
JUNG EUI HAN
32Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet LithographyKIM YONG KI [KR]
33Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or BothROBINSON ALEX P G [GB]
MCCLELLAND ALEXANDRA [GB]
O '' CALLAGHAN GREG [GB]
JACKSON ED [US]
NGUYEN VAN HUY [GB]
MELONI FERNANDA [IT]
34Phase Shift Blank Mask And Photomask For Euv LithographyKIM YONG-DAE
LEE JONG-HWA
YANG CHUL KYU
35Methods For Making Euv Patternable Hard MasksWU CHENGHAO
TIMOTHY WILLIAM WEIDMAN
KATIE NARDI
36Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofCHAO TZU-ANG [TW]
CHENG CHAO-CHING [TW]
WANG HAN [TW]
37Pellicle For Euv LithographyHONG JU HEE
PARK CHUL KYUN
CHOI MUN SU
KIM DONG HOI
38Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods ThereofAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
UNO TOSHIYUKI [JP]
ISHIKAWA ICHIRO [JP]
SAKAKI KENICHI [JP]
39Thin Film For Euv Lithography Mask And Method Of Manufacturing SameXU BEICHENG
LI WEIHAO
LI HUANLING
LI XINCHANG
LIN JINXIANG
40Euv Light Generation System And Production Method Of Electronic DeviceNISHIMURA YUICHI
UENO YOSHIFUMI
41Thin Film For Euv Lithography Mask And Method Of Manufacturing SameSON JUNG-PIL
XU BEICHENG
LI XINCHANG
42Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing SameJI MINGHUA
DONG YUHU
HUANG ZAOHONG
43Euv Photomask And Manufacturing Method ThereofXUE WENZHANG
LIAN DACHENG
LI XINCHANG
44Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The SameCHOI MUN SU
HONG JU HEE
PARK CHUL KYUN
KIM DONG HOI
45Detection Method Of Euv Pellicle StatusLIU YEN-HAO [TW]
WANG SHAO-HUA [TW]
ZHANG ZHENG-HAO [TW]
LIN FAN-CHI [TW]
KUO CHUEH-CHI [TW]
CHEN LI-JUI [TW]
LIU HENG-HSIN [TW]
46Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
47Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet LithographyKIM YONG KI [KR]
48Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods ThereforAKAGI DAIJIRO [JP]
KAWAHARA HIROTOMO [JP]
SASAKI KENICHI [JP]
ISHIKAWA ICHIRO [JP]
UNO TOSHIYUKI [JP]
49Extreme Ultraviolet Lithography Method And Euv PhotomaskLEE CHIEN-MIN [TW]
CHEN YEN-LIANG [TW]
LIN SHY-JAY [TW]
CHEN LEE-FENG [TW]
TAI KUO LUN [TW]
50Phase Shift Blankmask And Photomask For Euv LithographyPARK MIN-KWANG [KR]
PARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
YANG CHUL-KYU [KR]
KIM YONG-DAE [KR]
51Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The SamePARK MIN-KYU [KR]
WOO MI-KYUNG [KR]
PARK MIN-KWANG [KR]
YANG CHUL-KYU [KR]
52Membrane For Euv LithographyHOUWELING ZOMER SILVESTER [NL]
GHIASI KABIRI MAHNAZ [NL]
GIESBERS ADRIANUS JOHANNES MARIA [NL]
BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA [NL]
53Preferential Infiltration In Lithographic Process Flow For Euv Car ResistALVA GABRIELA [US]
HAN ZHEN-XING [CN]
SACHAN MADHUR [IN]
LANG CHI-I [US]
ZHOU LIN [CN]
LIU LEQUN [US]
KAZEM NASRIN [US]
54Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing ThereofLIMA MARCIO D [US]
UEDA TAKAHIRO [US]
55Pellicle For An Euv Lithography Mask And A Method Of Manufacturing ThereofLIN YUN-YUE [TW]
56Methods And Related Systems For Depositing Euv Sensitive FilmsPATEL KISHAN ASHOKBHAI [IN]
TOMCZAK YOANN [FR]
DEZELAH CHARLES [US]
ZYULKOV IVAN [RU]
DE ROEST DAVID KURT [BE]
GIVENS MICHAEL [US]
PIUMI DANIELE [IT]